A DC-50GHz SPDT Switch for 5G Wireless Applications

Mfonobong, Uko, Ekpo, Sunday ORCID: https://orcid.org/0000-0001-9219-3759, Elias, Fanuel, Saha, Dipankar, Ghosh, Swarnadipto, Ijaz, Muhammad ORCID: https://orcid.org/0000-0002-0050-9435, Chakraborty, Samik and Gibson, Andrew ORCID: https://orcid.org/0000-0003-2874-5816 (2023) A DC-50GHz SPDT Switch for 5G Wireless Applications. In: The Second International Adaptive and Sustainable Science, Engineering and Technology (ASSET 2023), 18 July 2023 - 20 July 2023, Ikot Akpaden, Nigeria and Manchester, UK. (In Press)

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Abstract

A broadband high isolation single pole double throw (SPDT) switch based on a 0.15 µm gate length Indium Gallium Arsenide (InGaAs) pseudomorphic high electron transistor (pHEMT) is reported. The SPDT switch is composed of four shunt-stacked FET units on each branch with two FETs in series for increased voltage handling capability. The switch is designed to operate at the frequency range of DC-50 GHz with less than 3dB insertion loss and more than 40 dB isolation, for X-band and K/Ka band frequency applications.

Item Type:	Conference or Workshop Item (Paper)
Peer-reviewed:	Yes
Date Deposited:	17 Jul 2023 08:05
Additional Information:	This is an Accepted Manuscript of a paper which will be presented at The Second International Conference on Adaptive and Sustainable Science, Engineering and Technology (ASSET 2023).
Divisions:	Faculties > Science and Engineering
Subject terms:	Broadband, High Isolation;, K/Ka band, SPDT;, Transceiver, X-Band
URI:	https://mmu-uat.leaf.cosector.com/id/eprint/632298

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